Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

β-Ga2O3 thin films were grown on the substrates of sapphire, GaN, and single crystals of β-Ga2O3, using plasma-assisted molecular beam epitaxy. By varying deposition conditions, pure-phase epitaxial β-Ga2O3 thin films were obtained, and the crystal quality of the as-grown films was optimized. A systematic characterization and a detailed analysis were performed on the films, including the nucleation process, surface morphology, crystal quality, thermal stability, as well as electrical and optical properties. Optical absorption was investigated using photothermal deflection spectroscopy, which provides detailed information about sub-gap optical absorption. Photocurrent measurements indicated a pronounced persistent photo-conductivity of β-Ga2O3. A blue-UV emission with an energy of 3–3.5 eV was observed by cathodoluminescence spectroscopy. The Fermi level position of the as-grown film was determined based on temperature-dependent electrical conductivity measurements. It is proposed that oxygen vacancies in the film form a defect band at around Ec-0.8 eV that pins the Fermi level and is related to the observed photocurrent and cathodoluminescence characteristics.

Nanowires intrinsically exhibit a large surface area, which makes them sensitive to physical and chemical interactions with their environment. Here, we investigate the surface recombination at m-plane side walls of selective area-grown GaN nanowires on Si (111) subjected to different environmental conditions. In contrast to the stable photoluminescence observed from c-plane surfaces of films, nanowires exhibit a distinct time-dependent photoluminescence quenching by over 90% within the time scale of seconds in the presence of air or dissociated liquids. This quenching is most pronounced for 50 nm diameter nanowires with interwire spacings larger than 500 nm due to internal electric field and external light field distributions. Ion- and pH-sensitive measurements, in combination with an externally applied voltage, allow the assignment of this effect to anions from the surroundings to accumulate at the nonpolar GaN side walls of the UV-exposed GaN nanowires. The decay times of the luminescence signal follow the dynamics of valence band holes, which deplete GaN surface states and positively charge the nanowire surfaces. This, in turn, induces the buildup of a capacitive anion shell around the nanowires, leading to an enhanced nonradiative surface recombination of photo-generated charge carriers from the GaN nanowire. In the absence of UV light, a recovery of the photoluminescence signal within tens of minutes indicates the dissolution of the anionic shell via charge balancing. The impact of light-induced electronic and ionic charge redistribution on photocarrier recombination represents an important mechanism of function for GaN nanowire-based devices, ranging from sensors to photocatalysts.