The approaches to stabilize the perovskite structure of formamidinium lead iodide (FAPI) commonly result in a blue-shift of the band gap, which limits the maximum photo-conversion efficiency.Here, we report the use of PbS colloidal quantum dots (QDs) as stabilizing agent, preserving the original low band gap of 1.5 eV,. The surface chemistry of PbS plays a pivotal role, by developing strong bonds with the black phase but weak ones with the yellow phase. As a result, stable perovskite FAPI black phase can be formed at temperatures as low as 85°C in just 10 minutes, setting a record of concomitantly fast and low temperature formation for FAPI, with important consequences for industrialization. FAPI thin films obtained through this procedure reach an open circuit potential (Voc) of 1.105 V -91% of the maximum theoretical Voc-and preserve the efficiency for more than 700 hours. These findings reveal the potential of strategies exploiting the chemi-structural properties of external additives to relax the tolerance factor and optimize the optoelectronic performance of perovskite materials.
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Sb2Se3 thin films are proposed as an alternative light harvester for semiconductor sensitized solar cells. An innovative electrodeposition route, based on aqueous alkaline electrolytes, is presented to obtain amorphous Sb2Se3. The amorphous to crystalline phase transition takes place during a soft thermal annealing in Ar atmosphere. The potential of the Sb2Se3 electrodeposited thin films in semiconductor sensitized solar cells is evaluated by preparing TiO2/Sb2Se3/CuSCN planar heterojunction solar cells. The resulting devices generate electricity from the visible and NIR photons, exhibiting the external quantum efficiency onset close to 1050 nm. Although planar architecture is not optimized in terms of charge carrier collection, photocurrent as high as 18 mA/cm(2), under simulated (AM1.5G) solar light, is achieved. Furthermore, the effect of the Sb2Se3 thickness and microstructural properties on the photocurrent is analyzed, suggesting the hole transport is the main limiting mechanism. The present findings provide significant insights to design efficient semiconductor sensitized solar cells based on advanced architectures (e.g., nanostructured and tandem), opening wide possibilities for progresses in this emerging photovoltaics technology.
The efficiency of perovskite optoelectronic devices is increased by a novel method; its suitability for perovskite solar cells, light-emitting diodes, and optical amplifiers is demonstrated. The method is based on the introduction of organic additives during the anti-solvent step in the perovskite thin-film deposition process. Additives passivate grain boundaries reducing non-radiative recombination. The method can be easily extended to other additives.
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