The gold-indium system is of primary interest for bonding processes such as solid-liquid interdiffusion bonding. In order to optimize the manufacturing parameters, it is essential to know which intermetallic compounds (IMCs) are formed when solid Au and liquid In are brought into close contact with each other, and what are their growth kinetics. For this purpose, we fabricated diffusion couples above and below the melting point of In (for T ¼ 250 and 150°C respectively). Three IMCs, identified as AuIn 2 , AuIn and Au 7 In 3 , are always observed in the reaction zone, even after short times. AuIn 2 is the thickest and fastest growing layer and AuIn is only present as a thin layer. Whereas AuIn 2 and AuIn exhibit an equiaxed structure, Au 7 In 3 is found to grow as columnar grains. The diffusion coefficients in each phase were determined by means of a 1-D finite difference modelling of In diffusion. The values are consistent and can be used to predict the growth rate as a function of temperature and time, i.e. to simulate a whole bonding process with finite thicknesses.

Au-In bonds with a nominal composition of about 60 at.% In were fabricated for use in wafer-level packaging of MEMS. The microstructure of the bonds was studied by scanning electron microscopy. The bond hermeticity was then assessed using oxidation of Cu thin discs predeposited within the sealed packages. The three intermetallic compounds AuIn 2 , AuIn and Au 7 In 3 were observed. Their thickness evolution during bonding and after subsequent heat treatment was successfully modelled using a finite difference model of diffusion, thermodynamic data and diffusion coefficients calibrated from isothermal diffusion couples. 17% of the packages were hermetic and, although the origin of the leaks could not be clearly identified, it appeared that hermeticity was correlated with the unevenness of the metallisation and/or wafer and the fact that the bonds shrink due to density differences as the relative fractions of the various phases gradually evolve.

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High frequency fundamental inverted mesa resonators with large pulling range have been produced in crystalline GaPO 4 . Motional capacitances at least 3 times larger than those of equivalent quartz resonators have been achieved for resonators with a fundamental frequency up to 155 MHz. High frequency resonators behave as a function of temperature as expected. Low frequency miniature tuning fork resonators have been produced as well. Their electrical and thermal parameters are similar to those of standard quartz crystal tuning forks, however the thermal compensation is not as good as expected from theory.