The OPERA neutrino experiment at the underground Gran Sasso Laboratory has measured the velocity of neutrinos from the CERN CNGS beam over a baseline of about 730 km. The measurement is based on data taken by OPERA in the years 2009, 2010 and 2011. Dedicated upgrades of the CNGS timing system and of the OPERA detector, as well as a high precision geodesy campaign for the measurement of the neutrino baseline, allowed reaching comparable systematic and statistical accuracies.An arrival time of CNGS muon neutrinos with respect to the one computed assuming the speed of light in vacuum of (6.5 ± 7.4 (stat.) +8.3 −8.0 (sys.)) ns was measured corresponding to a relative difference of the muon neutrino velocity with respect to the speed of light (v − c)/c = (2.7 ± 3.1 (stat.) +3.4 −3.3 (sys.)) × 10 −6 . The above result, obtained by comparing the time distributions of neutrino interactions and of protons hitting the CNGS target in 10.5 µs long extractions, was confirmed by a test performed at the end of 2011 using a short bunch beam allowing to measure the neutrino time of flight at the single interaction level.

review the design and construction of the detector and of its related infrastructures, and report on some technical performances of the various components. The construction of the detector started in 2003 and it was completed in Summer 2008. The experiment is presently in the data taking phase. The whole sequence of operations has proven to be successful, from triggering to brick selection, development, scanning and event analysis.

Leakage currents and dielectric breakdown were studied in MIS capacitors of metal-aluminum oxide-silicon. The aluminum oxide was produced by thermally oxidizing AlN at 800-1100 C under dry O 2 conditions. The AlN films were deposited by RF magnetron sputtering on p-type Si (100) substrates. Thermal oxidation produced Al 2 O 3 with a thickness and structure that depended on the process time and temperature. The MIS capacitors exhibited the charge regimes of accumulation, depletion, and inversion on the Si semiconductor surface. The best electrical properties were obtained when all of the AlN was fully oxidized to Al 2 O 3 with no residual AlN. The MIS flatband voltage was near 0 V, the net oxide trapped charge density, ox , was less than 10 11 cm 2 , and the interface trap density, , was less than 10 11 cm 2 eV 1 . At an oxide electric field of 0.3 MV/cm, the leakage current density was less than 10 7 A cm 2 , with a resistivity greater than 10 12 -cm. The critical field for dielectric breakdown ranged from 4 to 5 MV/cm. The temperature dependence of the current versus electric field indicated that the conduction mechanism was Frenkel-Poole emission, which has the interesting property that higher temperatures reduce the current. This may be important for the reliability of circuits operating under extreme conditions. The dielectric constant ranged from 3 to 9. The excellent electronic quality of aluminum oxide may be attractive for field effect transistor applications.