We have investigated the effects of thickness variation and thermal treatment of the electrode polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) in photovoltaic and photodetector devices using conjugated polymer blends as the photoactive material. By variation of the PEDOT:PSS layer thickness between 25 and 150 nm, we found optimum device performance, in particular low dark current and high external quantum efficiency (EQE) and open-circuit voltage (V oc ), at around 70 nm. This has been observed for two different active layers. Annealing studies on the PEDOT:PSS films, with temperatures varied between 120 and 400 °C, showed an optimum device performance, in particular EQE and V oc at 250 °C. This optimum performance was found to be associated with loss of water from the PSS shell of the PEDOT:PSS grains. For annealing temperatures above 260 °C, device performance was dramatically reduced. This was associated with chemical decomposition leading to loss of sulfonic acid, although this did not significantly affect the in-plane conductivity.

Herein we report a general liquid-mediated pathway for the growth of continuous polymeric carbon nitride (C3N4) thin films. The deposition method consists of the use of supramolecular complexes that transform to the liquid state before direct thermal condensation into C3N4 solid films. The resulting films exhibit continuous porous C3N4 networks on various substrates. Moreover, the optical absorption can be easily tuned to cover the solar spectrum by the insertion of an additional molecule into the starting complex. The strength of the deposition method is demonstrated by the use of the C3N4 layer as the electron acceptor in a polymer solar cell that exhibits a remarkable open-circuit voltage exceeding 1 V. The easy, safe, and direct synthesis of carbon nitride in a continuous layered architecture on different functional substrates opens new possibilities for the fabrication of many energy-related devices.

Single-layer polymer light-emitting field-effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A(-1) are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton-polaron quenching.

A combination of transient photovoltage (TPV), voltage dependent charge extraction (CE) and time delayed collection field (TDCF) measurements is applied to poly [[4,8-bis[(2-ethylhexyl) [3,4-b]thiophenediyl]] (PTB7):[6,6]phenyl-C71-butyric acid (PC 71 BM) bulk heterojunction solar cells to analyze the limitations of photovoltaic performance. Devices are processed from pure chlorobenzene (CB) solution and a subset was optimized with 1,8-diiodooctane (DIO) as co-solvent. The dramatic changes in device performance are discussed with respect to the dominating loss processes. While in the devices processed from CB solution, severe geminate and nongeminate recombination is observed, the use of DIO facilitates efficient polaron pair dissociation and minimizes geminate recombination. Thus, from the determined charge carrier decay rate under open circuit conditions and the voltage dependent charge carrier densities n(V ), the nongeminate loss current j loss of the samples with DIO alone enables us to reconstruct the current/voltage ( j/V ) characteristics across the whole operational voltage range. Geminate and nongeminate losses are considered to describe the j/V response of cells prepared without additive, but lead to a clearly overestimated device performance. We attribute the deviation between measured and reconstructed j/V characteristics to trapped charges in isolated domains of pure fullerene phases.

Color‐tunable photoluminescence from continuous graphitic carbon nitride (g‐C3N4) thin films is demonstrated. The films are employed in light‐emitting diodes. A strong redshift of the electroluminescence with respect to photo­luminescence is observed and a model for this uncommon behavior is provided.