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Phenoxy-thiophosphoryl-dihydrazide C6H5OP(S)(NH-NH2)2 (1a) and phenoxy-phosphoryl- dihydrazide C6H5OP(O)(NH-NH2)2 (1b) react with tetraalkyl-1,3-dichloro-disiloxanes to give the 1-oxa-3,5-diaza-4-phospha(λ5)-2,6-disila-cyclohexanes 2a-2d. Their 1H NMR, 31P NMR, IR, and Raman data are given

Wafers cut from Si-doped vertical gradient freeze (VGF) GaAs crystals with silicon concentration varying from 1.5 to 3.4 x 10(18) cm(-3) have been investigated by low temperature photoluminescence topography. Carrier concentration maps were calculated from intensity topograms recorded on the high-energy slope of the band-to-band recombination, which depends on the carrier concentration predominantly due to band renormalization and band filling. Comparison to maps recorded on the B-As-related PL band reveal a clear anti-correlation consistent with the view of B-As complex formation