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Black phosphorus (BP), a narrow band gap semiconductor without out-of-plane dangling bonds, has shown promise for broadband and integrable photodetector applications. Simultaneously exhibiting high speed and high-efficiency operation, however, remains a critical challenge for current BP-based photodetectors. Here, we demonstrate a photodetector based on the BP-based van der Waals heterostructures. The developed photodetector enables broadband responses in the visible to mid-infrared range with external quantum efficiency ranging from 20 to 52% at room temperature. These results together with noise measurements indicate that the photodetector can detect light in the picowatt range. Furthermore, the demonstrated BP detector has ultrafast rise (1.8 ns) and fall (1.68 ns) times, and its photoresponse exhibits reproducible switching behavior even under consecutive and rapid light intensity modulations (2100 cycles, 200 MHz), as indicated by the eye-diagram measurement. By leveraging these features, we show our BP heterostructures can be configured as a point-like detector in a scanning confocal microscopy, useful for mid-infrared imaging applications.

Light-emitting diodes (LEDs) based on III–V/II–VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications in sensing, including environmental monitoring, defense, and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip, but the uptake of such an approach is limited by the high costs and interfacial strains, associated with the processes of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room-temperature LEDs. The demonstrated devices emit linearly polarized light, and the spectra cover the technologically important mid-IR atmospheric window. Additionally, the BP LEDs exhibit fast modulation speed and exceptional operation stability. The measured peak extrinsic quantum efficiency is comparable to the III–V/II–VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED.

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A bias-selectable photodetector, which can sense the wavelength of interest by tuning the polarity of applied bias, is useful for target discrimination and identification applications. So far, those detectors are generally based on the back-to-back photodiode configuration via exploiting epitaxial semiconductors as optoelectronic materials, which inevitably lead to high fabrication costs and complex device architectures. Here, we demonstrate that our band-engineered van der Waals heterostructures can be applied as bias-selectable photodetectors. Our first prototypical device is mainly composed of black phosphorus (BP) and MoTe2 light absorbers sandwiching a thin MoS2 hole blocking layer. By varying the bias polarity, its spectral photoresponse can be switched between near-infrared and short-wave infrared bands, and our optoelectronic characterizations indicate that the detector can exhibit high external quantum efficiency (EQE) and fast operation speed. With this framework, we further demonstrate the detector with bias-selectable photoresponses within the mid-wave infrared band using BP/MoS2/arsenic-doped BP heterostructures and show that our developed detectors can be integrated into a single-pixel imaging system to capture dual-band infrared imaging.