Various mechanisms of electrical generation of spin polarization in nonmagnetic materials have been a subject of broad interest for their underlying physics and device potential in spintronics. One such scheme is chirality-induced spin selectivity (CISS), with which structural chirality leads to different electric conductivities for electrons of opposite spins. The resulting effect of spin filtering has been reported for a number of chiral molecules assembled on different surfaces. However, the microscopic origin and transport mechanisms remain controversial. In particular, the fundamental Onsager relation was argued to preclude linear-response detection of CISS by a ferromagnet. Here, we report definitive observation of CISS-induced magnetoconductance in vertical heterojunctions of (Ga,Mn)As/AHPA-L molecules/Au, directly verifying spin filtering by the AHPA-L molecules via spin detection by the (Ga,Mn)As. The pronounced and robust magnetoconductance signals resulting from the use of a magnetic semiconductor enable a rigorous examination of its bias dependence, which shows both linear-and nonlinear-response components. The definitive identification of the linear-response CISS-induced two-terminal spin-valve effect places an important constraint for a viable theory of CISS and its device manifestations. The results present a promising route to spin injection and detection in semiconductors without using any magnetic material.

We report the first numerical observation of composite fermion (CF) states in fractional Chern insulators (FCI) using exact diagonalization. The ruby lattice Chern insulator model for both fermions and bosons exhibits a clear signature of CF states at filling factors 2/5 and 3/7 (2/3 and 3/4 for bosons). The topological properties of these states are studied through several approaches. Quasihole and quasielectron excitations in FCI display similar features as their fractional quantum hall (FQH) counterparts. The entanglement spectrum of FCI groundstates shows an identical fingerprint to its FQH partner. We show that the correspondence between FCI and FQH obeys the emergent symmetry already established, proving the validity of this approach beyond the clustered states. We investigate other Chern insulator models and find similar signatures of CF states. However, some of these systems exhibit strong finite size effects.

Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin‐related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral‐induced spin selectivity (CISS) was discovered surprisingly that non‐magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini‐review points out a key technology of information storage for future spintronic devices without magnetic components.

We investigate the interplay between topological effects and Mott physics in two dimensions on a graphene-like lattice, via a tight-binding model containing an anisotropic spin-orbit coupling on the next-nearest-neighbour links and the Hubbard interaction. We thoroughly analyze the resulting phases, namely a topological band insulator phase or anisotropic quantum Spin Hall phase until moderate interactions, a Néel and Spiral phase at large interactions in the Mott regime, as well as the formation of a spin-orbital texture in the bulk at the Mott transition. The emergent magnetic orders at large interactions are analyzed through a spin wave analysis and mathematical arguments. At weak interactions, by analogy with the Kane-Mele model, the system is described through a Z2 topological invariant. In addition, we describe how the anisotropic spin-orbit coupling already produces an exotic spin texture at the edges. The physics at the Mott transition is described in terms of a U (1) slave rotor theory. Taking into account gauge fluctuations around the mean-field saddle point solution, we show how the spin texture now proliferates into the bulk above the Mott critical point. The latter emerges from the response of the spinons under the insertion of monopoles and this becomes more pronounced as the spin-orbit coupling becomes prevalent. We discuss implications of our predictions for thin films of the iridate compound Na2IrO3 and also graphene-like systems.