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The third-generation wide bandgap semiconductor GaN currently occupies a hot spot in the fields of high-power electronics and optoelectronics. Fully exploring its optical and optoelectronic characteristics is of great significance. Here, we provide a systematic study on the temperature-dependent dielectric functions of GaN grown by metal-organic chemical vapor deposition in the spectral range of 0.73–5.90 eV via spectroscopic ellipsometry experiments and first-principles calculations. Ellipsometric measurements identify two typical absorption peaks that originate from the excitonic and phonon-assisted indirect absorption process, respectively. To explore the underlying physics, we perform first-principles calculations using the independent-particle approximation, model Bethe–Salpeter equation (mBSE), and phonon-assisted indirect absorption process (Inabs). In comparison with ellipsometric measurements, the mBSE calculation determines the absorption peak contributed by the many-body excitonic effect, while the Inabs calculation successfully predicts the second absorption peak. When heating the crystal, it observes the redshift and weakening of absorption peaks, intrinsically due to the nontrivial electron–phonon interaction as lattice vibration strengthens. While doping GaN with Fe or Si elements, the introduced free carriers modify the electronic interband transition. As the temperature increases, more free carriers are excited, and the temperature influence on the absorption peak is more significant than that of the undoped one. This work fully explores the physical origins of the temperature and doping effect on UV–Vis dielectric functions of GaN, aiming to promote its application in the fields of high-power electronic devices.

SrTiO3 is the model perovskite compound and has demonstrated technological relevance from being the foundation of oxide electronics to a promising candidate as a high-temperature hydrogen sensor. Here, we fully investigate the temperature-dependent UV-Vis optical constants of pristine and doped SrTiO3 in the spectral range 0.73-5.90 eV using spectroscopic ellipsometry and first-principles. The oscillator model is applied to analyze and quantify the temperature and doping effect. After heating SrTiO3 from 300 to 873 K, the amplitude of the dominant absorption peak at 4.752 eV is reduced by 11% and the shoulder of optical spectrum at 3.708 eV gradually disappears. By doping SrTiO3 with Nb element from 0.05 to 0.7% wt, extra momentum is provided to enable indirect absorption and an unconventional Urbach tail is observed due to the increased crystalline disorder. Moreover, the first-principles calculations considering the many-body excitonic effect and phonon-assisted indirect absorption are performed, which help to determine the physics origin of absorption peaks and explain the temperature influence. This work sheds light on temperature and doping dependence of UV-Vis dielectric functions of cubic SrTiO3, aiming to elucidate the novel fundamental optical phenomena of SrTiO3-based heterostructures or devices.

Tantalum pentoxide (Ta2O5) has demonstrated promising applications in gate dielectrics and microwave communication devices with its intrinsically high dielectric constant and low dielectric loss. Although there are numerous studies on the dielectric properties of Ta2O5, few studies have focused on the influence of external environmental changes (i.e., temperature and pressure) on the dielectric properties and the underlying physics is not fully understood. Herein, we synthesize Ta2O5 thin films using the magnetron sputtering method, measure the ultraviolet-visible dielectric function at temperatures varying from 300 to 873 K by spectroscopic ellipsometry (SE), and investigate the temperature influence on the dielectric function from first principles. SE experiments observe that temperature has a nontrivial influence on the ultraviolet-visible dielectric function, accompanying the consistently decreased amplitude and increased broadening width for the dominant absorption peak. First-principles calculations confirm that the dominant absorption peak originates from the aggregated energy states near the valence band maximum (VBM) and conduction band minimum (CBM), and the theoretically predicted dielectric functions demonstrate good agreement with the SE experiments. Moreover, by performing first-principles molecular dynamics simulations, the finite-temperature dielectric function is predicted and its change trend with increasing temperature agrees overall with the SE measurements. This work explores the physical origins of temperature influence on the ultraviolet-visible dielectric function of Ta2O5, aimed at promoting its applications in the field of micro-/nanoelectronics.

Vanadium dioxide (VO2) is an attractive thermal-control material exhibiting low thermal hysteresis and excellent temperature cycling performance. However, the deficiencies including weak spectral shift and narrow-band absorption during insulating-metallic transitions hinder its application in optoelectronics. The transition metal dichalcogenides (TMDs) can provide a promising solution with their high dielectric properties and robust optical coupling. Here, we report a MoS2/VO2/Au/Si metasurface and investigate the dynamic tunability of its optical absorbance and structural color upon heating via spectroscopic ellipsometry measurements and numerical simulations. The first-principles calculations reveal that the dielectric absorptions of metallic and insulating VO2 oppositely response to temperature, closely related to the difference in the transitions of O-2p states. Finite-element simulations reveal that the introduction of MoS2 nanostructure induces more absorption peaks by 2∼3 and achieves strong absorption in the full wavelength range of visible light. The Fabry–Perot (F–P) resonance is the critical factor for the optimized optical absorption. The structural color is sensitive to environmental perturbations at high-ε state of VO2, lower oblique incidence angles, and heights of MoS2. This work seeks to facilitate the spectral modulation of phase change metamaterials and can be extended to photoelectric detection and temperature sensing applications.