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A novel pixel circuit providing expanded data voltage range is proposed for high resolution and high image quality organic lightemitting diode-on-silicon (OLEDoS) microdisplay applications. The proposed pixel circuit adopts a structure of four series connected NMOSFETs (4-SCN) to expand the input data voltage range, within which the circuit operates in the subthreshold region. In addition, the pixel circuit has improved image quality by introducing a compensation scheme. The proposed circuit is verified by the simulation based on a 0.18 μm BCDlite Isolation process. The proposed circuit can be integrated into a unit subpixel area of 2.9 × 8.7 μm 2 . The simulation results show that the input data voltage range of the proposed pixel circuit is 6.26 times wider than that of the traditional 2T1C pixel circuit [1], which is 4.42V. And the emission current deviation ranges from -4.7% to +4.2% under the threshold voltage variation of 5 mV, which is 31.01% for a traditional 2T1C pixel circuit [1].

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A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.