Molybdenum disulfide (MoS 2 ) and nanocrystalline diamond (NCD) have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications, including sensor devices in gas sensing applications. Combining MoS 2 and H-terminated NCD (H-NCD) in a heterostructure design can improve the sensing performance due to their mutual advantages. In this study, the synthesis of MoS 2 and H-NCD thin films using appropriate physical/ chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: oxidizing NO 2 , reducing NH 3 , and neutral synthetic air. It was observed that the MoS 2 /H-NCD heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO 2 (0.157%•ppm −1 ) and reducing NH 3 (0.188%•ppm −1 ) gases compared to pure active materials (pure MoS 2 achieves responses of 0.018%•ppm −1 for NO 2 and −0.0072%•ppm −1 for NH 3 , respectively, and almost no response for pure H-NCD at room temperature). Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without the heterostructure. The gas interaction model independently considers the influence of each material (chemisorption for MoS 2 and surface doping mechanism for H-NCD) as well as the current flow mechanism through the formed P−N heterojunction.

We present technological issues in the deposition of diamond films on gallium nitride (GaN) membranes. Many wrinkles and thicker diamond layers were observed at the membrane center and poor quality diamond outside the membrane area. The deflection of the membranes was analyzed by a bulging method using white light interferometry. The membrane bending is discussed in the terms of temperature gradient and mismatch of thermal expansion coefficients of materials.

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