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The CIGS thin films were prepared on ordinary soda lime glass substrates by pulsed laser deposition (PLD). The XRD and UV-visible spectrophotometer has been determined. The influence of different heat treatment temperature on crystal structure and optical properties has been studied. The results shows that heat treatment at 450°C, the films along the (112) plane preferential grow. The thin film’s structure is integrity, the film is in best crystallization conditions, band gap is 1.35eV and the film has a high visible light absorption efficiency.

Thin films of RE0.5Sr0.5CoO3-δ (RE=La, Pr, Nd) nominal composition were grown on yttria-stabilized zirconia (YSZ) single crystal substrates by ion-beam sputtering deposition method. The X-ray diffraction spectra and X-ray photoelectron spectroscopy were measured for RE0.5Sr0.5CoO3-δ thin films with perovskite structure. The experimental results indicate that the average grain size of RE0.5Sr0.5CoO3-δ thin films ranges from 86 to 165 nm，and the film obtained by heat-treating at 750 °C is highly oriented . The RE0.5Sr0.5CoO3-δ thin films being mixed-valent systems contains Co3+ and Co4+ ions. There is oxygen vacancy at an interface region for RE0.5Sr0.5CoO3-δ thin films.

This study is focused on the elaboration of 8 mol.% yttria stabilized zirconia (YSZ) thin films onto porous supporting NiOYSZ anode substrates using pulsed laser deposition (PLD),and their microstructural and electrical characterizations. Better crystallinity and grain connectivity is observed increasing the deposition temperature until best values are obtained at 500°C. The greater relative conductivity enhancement is found at 300-500°C. The observed an increased conductivity at lower temperatures may be caused by a combination of nanoscaled effect of the YSZ thin film and interfacial effects between YSZ thin film and substrate.