No abstract

The topological insulator BiSbTeSe2 corresponds to a compensated semiconductor in which strong Coulomb disorder gives rise to the formation of charge puddles, i.e., local accumulations of charge carriers, both in the bulk and on the surface. Bulk puddles are formed if the fluctuations of the Coulomb potential are as large as half of the band gap. The gapless surface, in contrast, is sensitive to small fluctuations but the potential is strongly suppressed due to the additional screening channel provided by metallic surface carriers. To study the quantitative relationship between the properties of bulk puddles and surface puddles, we performed infrared transmittance measurements as well as scanning tunneling microscopy measurements on the same sample of BiSbTeSe2, which is close to perfect compensation. At 5.5 K, we find surface potential fluctuations occurring on a length scale rs = 40 − 50 nm with amplitude Γ = 8 − 14 meV which is much smaller than in the bulk, where optical measurements detect the formation of bulk puddles. In this nominally undoped compound, the value of Γ is smaller than expected for pure screening by surface carriers, and we argue that this arises most likely from a cooperative effect of bulk screening and surface screening. arXiv:1708.09166v1 [cond-mat.mes-hall]

Our scanning tunneling microscopy and X-ray photoelectron spectroscopy experiments along with first-principles calculations uncover the rich phenomenology and enable a coherent understanding of carbon vapor interaction with graphene on Ir(111). At high temperatures, carbon vapor not only permeates to the metal surface but also densifies the graphene cover. Thereby, in addition to underlayer graphene growth, upon cool down also severe wrinkling of the densified graphene cover is observed. In contrast, at low temperatures the adsorbed carbon largely remains on top and self-organizes into a regular array of fullerene-like, thermally highly stable clusters that are covalently bonded to the underlying graphene sheet. Thus, a new type of predominantly sp-hybridized nanostructured and ultrathin carbon material emerges, which may be useful to encage or stably bind metal in finely dispersed form.

The electronic properties of graphene can be efficiently altered upon interaction with the underlying substrate resulting in a dramatic change of charge carrier behavior. Here, the evolution of the local electronic properties of epitaxial graphene on a metal upon the controlled formation of multilayers, which are produced by intercalation of atomic carbon in graphene/Ir(111), is investigated. Using scanning tunneling microscopy and Landau-level spectroscopy, it is shown that for a monolayer and bilayers with small-angle rotations, Landau levels are fully suppressed, indicating that the metal-graphene interaction is largely confined to the first graphene layer. Bilayers with large twist angles as well as twisted trilayers demonstrate a sequence of pronounced Landau levels characteristic for a free-standing graphene monolayer pointing toward an effective decoupling of the top layer from the metal substrate. These findings give evidence for the controlled preparation of epitaxial graphene multilayers with a different degree of decoupling, which represent an ideal platform for future electronic and spintronic applications.

We study chemically gated bilayer graphene using scanning tunneling microscopy and spectroscopy complemented by tight-binding calculations. Gating is achieved by intercalating Cs between bilayer graphene and Ir(111), thereby shifting the conduction band minima below the chemical potential. Scattering between electronic states (both intraband and interband) is detected via quasiparticle interference. However, not all expected processes are visible in our experiment. We uncover two general effects causing this suppression: first, intercalation leads to an asymmetrical distribution of the states within the two layers, which significantly reduces the scanning tunneling spectroscopy signal of standing waves mainly present in the lower layer; second, forward scattering processes, connecting points on the constant energy contours with parallel velocities, do not produce pronounced standing waves due to destructive interference. We present a theory to describe the interference signal for a general n-band material.