No abstract

Metallic nanowires of cobalt, copper, and iron oxide magnetite (Fe 3 O 4 ) have been synthesized within the pores of mesoporous silica using a supercritical fluid inclusion technique. The mesoporous matrix provides a means of producing a high density of stable, hexagonally ordered arrays of highly crystalline nanowires. The formation of the metal and metal oxide nanowires within the silica mesopores was confirmed by transmission electron microscopy (TEM), N 2 adsorption experiments, and powder X-ray diffraction (PXRD). The mechanism of nanowire formation within the mesopores appears to occur through the initial binding and coating of the pore walls with the metal atoms to form tubelike structures within the mesoporous template. The thickness of these tubes subsequently increases with further metal deposition until nanowires are formed. Additionally, the crystal structure of the cobalt nanowires formed within the mesoporous template can be readily changed by manipulating the density of the supercritical fluid phase.

Semiconductor nanowires of silicon have been synthesized within the pores of mesoporous silica using a novel supercritical fluid solution-phase approach. Mesoporous silica, formed by the hydrolysis of tetramethoxysilane (TMOS) in the presence of a triblock copolymer surfactant, was employed for the nucleation and growth of quantum-confined nanowires. The filling of the silica mesopores with crystalline silicon and the anchoring of these nanowires to the sides of the pores were confirmed by several techniques including electron microscopy, powder X-ray diffraction, 29Si magic angle spinning nuclear magnetic resonance, infrared spectroscopy, and X-ray fluorescence. Effectively, the silica matrix provides a means of producing a high density of stable, well-ordered arrays of semiconductor nanowires in a low dielectric medium. The ordered arrays of silicon nanowires also exhibited discrete electronic and photoluminescence transitions that could be exploited in a number of applications, including nanodevices and interconnects.