Highly strained 3C-SiC/Si (001) epilayers of different thicknesses (0.1 µm-12.4 µm) prepared in a vertical reactor configuration by chemical vapor deposition (V-CVD) method were examined using Raman scattering spectroscopy (RSS). In the near backscattering geometry, our RSS results for "as-grown" epilayers revealed TO-and LO-phonon bands shifting towards lower frequencies by approximately ~2 cm -1 with respect to the "free-standing" films. Raman scattering data of optical phonons are carefully analyzed by using an elastic deformation theory with inputs of hydrostatic-stress coefficients from a realistic lattice dynamical approach that helped assess biaxial stress, inplane tensile-and normal compressive-strain, respectively. In each sample, the estimated value of strain is found at least two order of magnitude smaller than the one expected from lattice mismatch between the epilayer and substrate. This result has provided a strong corroboration to our recent average-t-matrix Green's function theory of impurity vibrational modes -indicating that the high density of intrinsic defects at the 3C-SiC/Si interface are possily responsible for releasing the misfit stresses and strains. Unlike others, our RSS study in "as-grown" 3C-SiC/Si (001) has reiterated the fact that for ultrathin epilayers (d<0.4 µm) the optical modes of 3C-SiC are markedly indistinctive.