Thin-film solar cells based on Methylammonium triiodideplumbate (CH3NH3PbI3) halide perovskites have recently shown remarkable performance. First-principle calculations show that CH3NH3PbI3 has unusual defect physics: (i) Different from common p-type thin-film solar cell absorbers, it exhibits flexible conductivity from good p-type, intrinsic to good n-type depending on the growth conditions; (ii) Dominant intrinsic defects create only shallow levels, which partially explain the long electron-hole diffusion length and high open-circuit voltage in solar cell. The unusual defect properties can be attributed to the strong Pb lone-pair s orbital and I p orbital antibonding coupling and the high ionicity of CH3NH3PbI3.

Halide perovskites solar cells have the potential to exhibit higher energy conversion efficiencies with ultrathin films than conventional thin-film solar cells based on CdTe, CuInSe2 , and Cu2 ZnSnSe4 . The superior solar-cell performance of halide perovskites may originate from its high optical absorption, comparable electron and hole effective mass, and electrically clean defect properties, including point defects and grain boundaries.

A synergic interface design is demonstrated for photostable inorganic mixed‐halide perovskite solar cells (PVSCs) by applying an amino‐functionalized polymer (PN4N) as cathode interlayer and a dopant‐free hole‐transporting polymer poly[5,5′‐bis(2‐butyloctyl)‐(2,2′‐bithiophene)‐4,4′‐dicarboxylate‐alt‐5,5′‐2,2′‐bithiophene] (PDCBT) as anode interlayer. First, the interfacial dipole formed at the cathode interface reduces the workfunction of SnO2, while PDCBT with deeper‐lying highest occupied molecular orbital (HOMO) level provides a better energy‐level matching at the anode, leading to a significant enhancement in open‐circuit voltage (Voc) of the PVSCs. Second, the PN4N layer can also tune the surface wetting property to promote the growth of high‐quality all‐inorganic perovskite films with larger grain size and higher crystallinity. Most importantly, both theoretical and experimental results reveal that PN4N and PDCBT can interact strongly with the perovskite crystal, which effectively passivates the electronic surface trap states and suppresses the photoinduced halide segregation of CsPbI2Br films. Therefore, the optimized CsPbI2Br PVSCs exhibit reduced interfacial recombination with efficiency over 16%, which is one of the highest efficiencies reported for all‐inorganic PVSCs. A high photostability with a less than 10% efficiency drop is demonstrated for the CsPbI2Br PVSCs with dual interfacial modifications under continuous 1 sun equivalent illumination for 400 h.

The schematic diagram of different Sn-5s and I-5p antibonding strengths of FASnI3 and MASnI3 due to various bond lengths of Sn–I.

Organic-inorganic methylammounium lead halide perovskites have recently emerged as promising solar photovoltaic absorbers. In this feature article, we review our theoretical understanding of the superior photovoltaic properties, such as the extremely high optical absorption coefficient and very long carrier diffusion length of CH 3 NH 3 PbI 3 perovskites through first-principles theory. We elucidate that the superior photovoltaic properties are attributed to the combination of direct band gap p-p transitions enabled by the Pb lone-pair s orbitals and perovskite symmetry, high iconicity, large lattice constant, and strong antibonding coupling between Pb lone-pair s and I p orbitals. We show that CH 3 NH 3 PbI 3 exhibits intrinsic ambipolar self-doping behavior with conductivities tunable from p-type to n-type via controlling the growth conditions. We show that the p-type conductivity can be further improved by incorporating some group IA, IB, or VIA elements at I-rich/Pb-poor growth conditions. However, the n-type conductivity cannot be improved under thermal equilibrium growth conditions through extrinsic doping due to the compensation from intrinsic point defects.