The inverse spin Hall effect (ISHE) is one of the accessible and reliable methods to detect spin current. The magnetization‐dependent inverse spin Hall effect has been observed in magnets, expanding the dimension for spin‐to‐charge conversion. However, antiferromagnetic Néel‐vector‐dependent ISHE, which has been long time highly pursued, is still elusive. Here, ISHE in Mn2Au/[Co/Pd] heterostructures is investigated by terahertz emission and spin Seebeck effect measurements, where [Co/Pd] possesses perpendicular magnetic anisotropy for out‐of‐plane polarized spin current generation and Mn2Au is a collinear antiferromagnet for the spin‐to‐charge conversion. The out‐of‐plane spin polarization (σz) is rotated toward in‐plane by the Néel vectors in Mn2Au, then the spin current is converted into charge current at two staggered spin sublattices. The ISHE signal is much stronger when the converted charge current is parallel to the Néel vector compared with its orthogonal counterpart. The Néel vector and resultant ISHE signals, which is termed as antiferromagnetic inverse spin Hall effect, can be switched. The finding not only adds a new member to the Hall effect family, but also makes antiferromagnetic spintronics more flexible.

Recent discovery of two-dimensional (2D) magnets with van der Waals (vdW) gapped layered structure prospers the fundamental research of magnetism and advances the miniaturization of spintronics. Due to their unique lattice anisotropy, their band structure has the potential to be dramatically modulated by the spin configuration even in thin flakes, which is still unexplored. Here, we demonstrate the vdW lattice-induced spin modulation of band structure in thin flakes of vdW semiconductor Cr2Ge2Te6 (CGT) through the measurement of magnetoresistance (MR). The significant anisotropic lattice constructed by the interlayer vdW force and intralayer covalent bond induces anisotropic spin-orbit field, resulting in the spin orientation-dependent band splitting. Consequently, giant variation of resistance is induced between the magnetization aligned along in-plane and out-of-plane directions. Based on this, a colossal MR beyond 1000% was realized in lateral nonlocal devices with CGT acting as a magneto switch. Our finding provides a unique feature for the vdW magnets and would advance its applications in spintronics.

The increasing interest in antiferromagnetic electronics is driven by the vision of the operation in the terahertz regime and ultrahigh density memories. The use of a terahertz wave to scale up the writing speed to terahertz has been reported in the antiferromagnetic single layer CuMnAs with sublattice symmetry broken. Here, a reversible and reproducible switching in antiferromagnetic insulators α-Fe2O3 is achieved in α-Fe2O3/Pt heterostructures by a terahertz wave pulse, and the switching capability is consistent with the current pulse-induced switching counterpart. The temperature variation during the terahertz pulse is simulated by finite element simulation analysis, for extreme (∼1.5 ps) short terahertz pulses, the thermal effect can be negligible and the mechanism responsible for the terahertz pulse-induced antiferromagnetic switching points to the dampinglike spin–orbit torque. Our finding paves the way for the antiferromagnet/heavy metal bilayers for ultrahigh density memories and high-frequency devices up to terahertz operation.

As the core of spintronics, the transport of spin aims at a low-dissipation data process. The pure spin current transmission carried by magnons in antiferromagnetic insulators is natively endowed with superiority such as long-distance propagation and ultrafast speed. However, the traditional control of magnon transport in an antiferromagnet via a magnetic field or temperature variation adds critical inconvenience to practical applications. Controlling magnon transport by electric methods is a promising way to overcome such embarrassment and to promote the development of energy-efficient antiferromagnetic logic. Here, the experimental realization of an electric field-induced piezoelectric strain-controlled magnon spin current transmission through the antiferromagnetic insulator in the Y 3 Fe 5 O 12 /Cr 2 O 3 /Pt trilayer is reported. An efficient and nonvolatile manipulation of magnon propagation/blocking is achieved by changing the relative direction between the Neél vector and spin polarization, which is tuned by ferroelastic strain from the piezoelectric substrate. The piezoelectric strain-controlled antiferromagnetic magnon transport opens an avenue for the exploitation of antiferromagnet-based spin/magnon transistors with ultrahigh energy efficiency.

In conventional ferromagnet/spacer/ferromagnet sandwiches, noncollinear couplings are commonly absent because of the low coupling energy and strong magnetization. For antiferromagnets (AFM), the small net moment can embody a low coupling energy as a sizable coupling field, however, such AFM sandwich structures have been scarcely explored. Here we demonstrate orthogonal interlayer coupling at room temperature in an all-antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the Néel vectors in the top and bottom Fe2O3 layers are strongly orthogonally coupled and the coupling strength is significantly affected by the thickness of the antiferromagnetic Cr2O3 spacer. From the energy and symmetry analysis, the direct coupling via uniform magnetic ordering in Cr2O3 spacer in our junction is excluded. The coupling is proposed to be mediated by the non-uniform domain wall state in the spacer. The strong long-range coupling in an antiferromagnetic junction provides an unexplored approach for designing antiferromagnetic structures and makes it a promising building block for antiferromagnetic devices.