We present tip-enhanced upconversion photoluminescence (PL) images of Er(3+)- and Yb(3+)-doped NaYF4 nanocrystals on glass substrates with subdiffraction spatial resolution. Tip-sample distance dependent measurements clearly demonstrate the near-field origin of the image contrast. Time-resolved PL measurements show that the tip increases the spontaneous emission rate of the two emission channels of Er(3+) in the visible region. Very efficient enhancement of upconversion PL is discussed in the context of the two-photon nature of the excitation process and homoenergy transfer between the ions within the nanocrystals. Comparison between different nanocrystals and tips shows a strong influence of the tip shape on the image contrast that becomes particularly relevant for the larger dimensions of the investigated nanocrystals.

We demonstrate the remote excitation and detection of surface-enhanced Raman scattering (SERS) from graphene using a silver nanowire as a plasmonic waveguide. By investigating a nanowire touching a graphene sheet at only one terminal, we first show the remote excitation of SERS from graphene by propagating surface plasmon polaritons (SPPs) launched by a focused laser over distances on the order of 10 μm. Remote detection of SERS is then demonstrated for the same nanowire by detecting light emission at the distal end of the nanowire that was launched by graphene Raman scattering and carried to the end of the nanowire by SPPs. We then show that the transfer of the excitation and Raman scattered light along the nanowire can also be visualized through spectrally selective back focal plane imaging. Back focal plane images detected upon focused laser excitation at one of the nanowire's tips reveal propagating surface plasmon polaritons at the laser energy and at the energies of the most prominent Raman bands of graphene. With this approach the identification of remote excitation and detection of SERS for nanowires completely covering the Raman scatterer is achieved, which is typically not possible by direct imaging.

Planar defects, such as stacking faults and twins, are the most common defects in III–V semiconductor nanowires. Here we report on the effect of surface perturbation caused by twin planes on surface optical (SO) phonon modes. Self-catalyzed GaAs nanowires with varying planar defect density were grown by molecular beam epitaxy and investigated by Raman spectroscopy and transmission electron microscopy (TEM). SO phonon peaks have been detected, and the corresponding spatial period along the nanowire axis were measured to be 1.47 μm (±0.47 μm) and 446 nm (±35 nm) for wires with twin densities of about 0.6 (±0.2) and 2.2 (±0.18) per micron. For the wires with extremely high density of twins, no SO phonon peaks were detected. TEM analysis of the wires reveal that the average distance between the defects are in good agreement with the SO phonon spatial period determined by Raman spectroscopy.