We have in detail characterized the anisotropic charge response of the dimer Mott insulator κ-(BEDT-TTF)2Cu2(CN)3 by dc conductivity, Hall effect and dielectric spectroscopy. At room temperature the Hall coefficient is positive and close to the value expected from stoichiometry; the temperature behavior follows the dc resistivity ρ(T ). Within the planes the dc conductivity is well described by variable-range hopping in two dimensions; this model, however, fails for the out-ofplane direction. An unusually broad in-plane dielectric relaxation is detected below about 60 K; it slows down much faster than the dc conductivity following an Arrhenius law. At around 17 K we can identify a pronounced dielectric anomaly concomitantly with anomalous features in the mean relaxation time and spectral broadening. The out-of-plane relaxation, on the other hand, shows a much weaker dielectric anomaly; it closely follows the temperature behavior of the respective dc resistivity. At lower temperatures, the dielectric constant becomes smaller both within and perpendicular to the planes; also the relaxation levels off. The observed behavior bears features of relaxor-like ferroelectricity. Because heterogeneities impede its long-range development, only a weak tunneling-like dynamics persists at low temperatures. We suggest that the random potential and domain structure gradually emerge due to the coupling to the anion network.
Infrared optical investigations of α-(BEDT-TTF)2I3 have been performed in the spectral range from 80 to 8000 cm −1 down to temperatures as low as 10 K by applying hydrostatic pressure. In the metallic state, T > 135 K, we observe a 50% increase in the Drude contribution as well as the mid-infrared band due to the growing intermolecular orbital overlap with pressure up to 11 kbar. In the ordered state, T < TCO, we extract how the electronic charge per molecule varies with temperature and pressure: Transport and optical studies demonstrate that charge order and metalinsulator transition coincide and consistently yield a linear decrease of the transition temperature TCO by 8 − 9 K/kbar. The charge disproportionation ∆ρ diminishes by 0.017 e/kbar and the optical gap ∆ between the bands decreases with pressure by -47 cm −1 /kbar. In our high-pressure and low-temperature experiments, we do observe contributions from the massive charge carriers as well as from massless Dirac electrons to the low-frequency optical conductivity, however, without being able to disentangle them unambiguously.
The neutral-to-ionic phase transition in the mixed-stack charge-transfer complex tetrathiafulvalene-p-chloranil (TTF-CA) has been studied by pressure-dependent infrared spectroscopy up to p = 11 kbar and down to low temperatures, T = 10 K. By tracking the C=O antisymmetric stretching mode of CA molecules, we accurately determine the ionicity of TTF-CA in the pressure-temperature phase diagram. At any point the TTF-CA crystal bears only a single ionicity; there is no coexistence region or an exotic high-pressure phase. Our findings shed new light on the role of electron-phonon interaction in the neutral-ionic transition.
The two-dimensional organic conductor α-(BEDT-TTF)2I3 undergoes a metal-insulator transition at TCO = 135 K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to explore the field-and temperature-dependent dynamics. At a certain threshold field, the system switches from low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to TCO the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for T > TCO. Well into the insulating state, however, at T = 80 K, the spectral response evidences a completely different electronically-induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge-carriers with a linear dispersion of the electronic bands found in α-(BEDT-TTF)2I3 at high-pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.
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