This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing $$\overline{4}3m$$ 4 ¯ 3 m symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.

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We propose and experimentally verify a methodology to scale arbitrary units to photocurrent spectral density (A/eV) in Fourier transform Photocurrent (FTPC) spectroscopy. We also propose the FTPC scaling to responsivity (A/W), provided a narrow-band optical power measurement is available. The methodology is based on an interferogram waveform consisting of a constant background and interference contribution. We also formulate conditions that have to be met for correct scaling. We experimentally demonstrate the technique on a calibrated InGaAs diode and weak responsivity, long response time SiC interdigital detector. We identify a series of impurity-band and interband transitions in the SiC detector and slow mid-gap to conduction band transitions.