Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences of bits. TRNG circuits with high degree of randomness and low power consumption may be fabricated by using the random telegraph noise (RTN) current signals produced by polarized metal/insulator/metal (MIM) devices as entropy source. However, the RTN signals produced by MIM devices made of traditional insulators, i.e., transition metal oxides like HfO2 and Al2O3, are not stable enough due to the formation and lateral expansion of defect clusters, resulting in undesired current fluctuations and the disappearance of the RTN effect. Here, the fabrication of highly stable TRNG circuits with low power consumption, high degree of randomness (even for a long string of 224 − 1 bits), and high throughput of 1 Mbit s−1 by using MIM devices made of multilayer hexagonal boron nitride (h‐BN) is shown. Their application is also demonstrated to produce one‐time passwords, which is ideal for the internet‐of‐everything. The superior stability of the h‐BN‐based TRNG is related to the presence of few‐atoms‐wide defects embedded within the layered and crystalline structure of the h‐BN stack, which produces a confinement effect that avoids their lateral expansion and results in stable operation.

Low-power smart devices are becoming pervasive in our world. Thus, relevant research efforts are directed to the development of innovative low power computing solutions that enable inmemory computations of logic-operations, thus avoiding the von Neumann bottleneck, i.e., the known showstopper of traditional computing architectures. Emerging non-volatile memory technologies, in particular Resistive Random Access memories, have been shown to be particularly suitable to implement logic-in-memory (LIM) circuits based on the material implication logic (IMPLY). However, RRAM devices non-idealities, logic state degradation, and a narrow design space limit the adoption of this logic scheme. In this work, we use a physics-based compact model to study an innovative smart IMPLY (SIMPLY) logic scheme which exploits the peripheral circuitry embedded in ordinary IMPLY architectures to solve the mentioned reliability issues, drastically reducing the energy consumption and setting clear design strategies. We then use SIMPLY to implement a 1-bit full adder and compare the results with other LIM solutions proposed in the literature.

Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true random number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of the RTN signal. In this paper, an exhaustive statistical analysis on the quality of the RTN signals produced by different MIM‐like memristors is reported, and straightforward guidelines for the fabrication of memristors with enhanced RTN performance are presented, which are: i) Ni and Ti electrodes show better RTN than Au electrodes, ii) the 50 μm × 50 μm devices show better RTN than the 5 μm × 5 μm ones, iii) TiO2 shows better RTN than HfO2 and Al2O3, iv) sputtered‐oxides show better RTN than ALD‐oxides, and v) 10 nm thick oxides show better RTN than 5 nm thick oxides. The RTN signals recorded have been used as entropy sources in high‐throughput TRNG circuits, which have passed the randomness tests of the National Institute of Standards and Technology. The work can serve as a useful guide for materials scientists and electronic engineers when fabricating MIM‐like memristors for RTN applications.