BackgroundBacteria release a wide variety of small molecules including cell-to-cell signaling compounds. Gram-negative bacteria use a variety of self-produced autoinducers such as acylated homoserine lactones (acyl-HSLs) as signal compounds for quorum sensing (QS) within and between bacterial species. QS plays a significant role in the pathogenesis of infectious diseases and in beneficial symbiosis by responding to acyl-HSLs in Pseudomonas aeruginosa. It is considered that the selection of bacterial languages is necessary to regulate gene expression and thus it leads to the regulation of virulence and provides a growth advantage in several environments. In this study, we hypothesized that RND-type efflux pump system MexAB-OprM of P. aeruginosa might function in the selection of acyl-HSLs, and we provide evidence to support this hypothesis.ResultsLoss of MexAB-OprM due to deletion of mexB caused increases in QS responses, as shown by the expression of gfp located downstream of the lasB promoter and LasB elastase activity, which is regulated by a LasR-3-oxo-C12-HSL complex. Either complementation with a plasmid containing wild-type mexB or the addition of a LasR-specific inhibitor, patulin, repressed these high responses to 3-oxo-acyl-HSLs. Furthermore, it was shown that the acyl-HSLs-dependent response of P. aeruginosa was affected by the inhibition of MexB transport activity and the mexB mutant. The P. aeruginosa MexAB-OprM deletion mutant showed a strong QS response to 3-oxo-C10-HSL produced by Vibrio anguillarum in a bacterial cross-talk experiment.ConclusionThis work demonstrated that MexAB-OprM does not control the binding of LasR to 3-oxo-Cn-HSLs but rather accessibility of non-cognate acyl-HSLs to LasR in P. aeruginosa. MexAB-OprM not only influences multidrug resistance, but also selects acyl-HSLs and regulates QS in P. aeruginosa. The results demonstrate a new QS regulation mechanism via the efflux system MexAB-OprM in P. aeruginosa.

The growth of Shockley type stacking faults in p-i-n diodes fabricated on the C-face of 4H-SiC during forward current operation was investigated using Berg-Barrett X-ray topography and photoluminescence imaging. After forward current experiment, Shockley type stacking faults were generated from very short portions of basal plane dislocations lower than the conversion points to threading edge dislocations in the epitaxial layer. The growth behavior of Shockley type stacking faults was discussed. Growth of stacking faults in the substrates was not observed.

The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active-area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active-area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27 °C) under two-terminal and four-terminal configurations, respectively, is demonstrated.

We investigated the dependency of minority carrier lifetimes on the nitrogen concentration, temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC epilayers. The minority carrier lifetimes greatly shortened when the nitrogen concentration exceeded 1018 cm−3 through enhancing direct band-to-band and Auger recombination and showed a slight variation in the temperature range from room temperature (RT) to 250 °C. The epilayer with a nitrogen concentration of 9.3 × 1018 cm−3 exhibited a very short minority carrier lifetime of 38 ns at RT and 43 ns at 250 °C. The short minority carrier lifetimes of the highly nitrogen-doped epilayer were confirmed to maintain the values even after the subsequent annealing of 1700 °C. 4H-SiC PiN diodes were fabricated by depositing a highly nitrogen-doped epilayer as a “recombination enhancing layer” between an n− drift layer free from basal plane dislocations and the substrate. The PiN diodes showed no formation of stacking faults and no increase in forward voltage during current conduction of 600 A/cm2 (DC), demonstrating that a highly nitrogen-doped buffer layer with a short minority carrier lifetime successfully suppresses the “bipolar degradation” phenomenon.

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