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In order to make a thin film of sodium silicide (NaSi), Na was evaporated onto a Si substrate, and the evaporated Na film was annealed under Ar atmosphere without exposure to the air. The annealing condition with 350 °C for 4 h yielded the XRD patterns characteristics of NaSi, indicating the formation of the NaSi on the Si substrate (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH 4 /CH 4 /H 2 gases, and the influence of substrate temperature, T s (104 < T s < 434 C), on the properties of the SiC thin films was investigated. X-ray diffraction patterns and Raman scattering spectra revealed that nanocrystalline cubic SiC (nc-3C-SiC) films grew at T s above 187 C, while completely amorphous films grew at T s ¼ 104 C. Fourier transform infrared absorption spectra revealed that the crystallinity of the nc-3C-SiC was improved with increasing T s up to 282 C and remained almost unchanged with a further increase in T s from 282 to 434 C. The spin density was reduced monotonically with increasing T s .