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Electroless plating can uniformly plate a material on irregular and non-conducting surfaces. Consequently, it has been utilized widely for printed circuit boards in the electronics industry. During the plating process, internal stress is frequently incorporated into the film and this often results in detachment from the substrate. In order to investigate the origins of stress in the films, measurements of film stress are required during the early stages of growth. In this study, TV holography, which can capture holographic images at TV frame rates, was used to sensitively measure the deflection of the cantilever beam during deposition. By substituting the deformation data in Stoney’s equation, it is possible to calculate internal stresses in-situ. The internal stress created by electroless plating from a Cu plating solution on a Be-Cu substrate is discussed. It is assumed that the internal stress is generated in the initial stage in which the plating grains with a thickness of about 0.01µm deposit. This paper shows that the present method can be very useful for in-situ measurement of initial internal stress.

The structural aspect of photodegradation effect in hydrogenated amorphous silicon has been investigated by the use of the simple and sensitive detection technique, the laser optical-lever bending method, for a small expansion or extraction in thin films. The volume change induced by the thermal expansion due to the photothermal effect and the residual expansion was observed in hydrogenated amorphous silicon prepared by PECVD. The latter residual expansion was persistent after light soaking and was recovered by thermal annealing at 200°C.The time dependence of the volume expansion with light soaking shows the same time dependence of photoinduced defect density. The photoinduced volume changes normalized by the initial volume are the order of 10-5~10-5, which values are two orders smaller than chalcogenide glasses such as a-As2S3. The normalized volume change of a-Si:H with the different sample preparation conditions of PECVD such as the hydrogen dilution ratio r (r = SiH4/H2) and substrate temperature is shown. Also it is demonstrated that the photoinduced expansion is observed in hydrogenated amorphous silicon prepared by photo CVD and hot-wire CVD methods. The spatial extent related to a photoinduced defect creation in a-Si:H is estimated.