Homoepitaxial Si films have been deposited at a high rate of 200 nm s−1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1–0.3 nm (1 × 1 μm2) and a Hall mobility of ∼240 cm2 V−1 s−1. The results suggested that under the MPCVD the deposition precursors formed at the plasma edge could be small enough not to influence either epitaxial film structure or the film quality provided the substrate temperature is maintained above 500 °C.

Newly developed stress profile of chemically strengthened glass for smartphone cover glass is demonstrated in this study. This innovative stress profile, named as EICS profile, improves the durability to the drop breakage. With this EICS profile, high strength cover glass, such as the glass, which is 2 times or more stronger than ever to the rough ground, can be obtained.