No abstract

Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

We have prepared an Al–Y anodized capacitor using sputter-deposited Al–Y alloy film with 5 at. % Y atoms, and evaluated the capacitor properties and the leakage current properties before and after heat treatment. In addition, the characterization of Al–Y anodized films was examined by X-ray diffraction, Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy analyses. As a result, it is revealed that the thermal stability of an Al–Y anodized capacitor is superior to that of a pure Al anodized capacitor because of its excellent passive nature, and the loss properties can be improved by increasing the heat treatment temperature in air because of the reduction of the equivalent series resistance. Furthermore, it is clarified that the cause of the short-circuited state observed at 550°C is the formation of a narrow capillary-like conduction path of metallic Al atoms as a result of the interdiffusion of Al.