For the existing pattern of global oceanic circulation to exist, there should be sufficiently strong turbulent mixing in the abyssal ocean, the mechanisms of which are not well understood as yet. The review discusses a plausible mechanism of deep ocean mixing caused by near-inertial waves in the abyssal ocean. It is well known how winds in the atmosphere generate near-inertial waves in the upper ocean, which then propagate downwards losing their energy in the process; only a fraction of the energy at the surface reaches the abyssal ocean. An open question is whether and, if yes, how these weakened inertial motions could cause mixing in the deep. We review the progress in the mathematical description of a mechanism that results in an intense breaking of near-inertial waves near the bottom of the ocean and thus enhances the mixing. We give an overview of the present state of understanding of the problem covering both the published and the unpublished results; we also outline the key open questions. For typical ocean stratification, the account of the horizontal component of the Earth's rotation leads to the existence of near-bottom wide waveguides for near-inertial waves. Due to the β-effect these waveguides are narrowing in the poleward direction. Near-inertial waves propagating poleward get trapped in the waveguides; we describe how in the process these waves are focusing more and more in the vertical direction, while simultaneously their group velocity tends to zero and wave-induced vertical shear significantly increases. This causes the development of shear instability, which is interpreted as wave breaking. Remarkably, this mechanism of local intensification of turbulent mixing in the abyssal ocean can be adequately described within the framework of linear theory. The qualitative picture is similar to wind wave breaking on a beach: the abyssal ocean always acts as a surf zone for near-inertial waves.

Extreme ultraviolet lithography is one of the most promising processes for high volume manufacturing of sub-10nm node device. Currently, studies on resist to achieve higher resolution have been intensively conducted. However, to achieve high resolution, it is also important to take care of resist development process in which pattern collapse and pattern bridging are observed commonly. In such a state, rinse material is known to mitigate pattern collapse and pattern bridging.In this paper, we studied the effectiveness of rinse material against lithography performance with two parameters, such as surface tension and resist affinity. As the result, the best rinse material achieved better resist resolution of 16 nm half pitch, larger process window and higher resist sensitivity by 5.5% than DIW.

No abstract