TSEE glow curves were studied for ion-implanted LiF single-crystals and for crystals irradiated by X-rays as well as those thermally annealed and irradiated by X-rays (afterward). It was found that the TSEE glow curve for Mg+ implanted LiF is influenced by the implantation energy and dose. Also, the annealed Mg+ implanted LiF (100 kV ×1012 Mg+/cm2) showed a greater response upon X-rays irradiation (compared with non-implanted LiF). Variations in the TSEE glow curves are qualitatively discussed.

Exoelectron emission has been applied to measurements of the depth-dose curve for gamma-ray fields from a dosimetric point of view. With thin dosemeter elements of LiF single crystals (0.4 mm thick) and Li2B4O7 glass ceramics (0.18 mm thick), the absorbed dose was experimentally determined as a function of depth to be between 0.0264 and 2.64 g/cm2. A procedure for evaluating kerma has also been proposed. An important factor, the distance that secondary electrons maintain their kinetic energy, was numerically obtained from a derived approximation formula and a Monte Carlo code.

Thermally stimulated exoelectron emission (TSEE) was studied for MgO single crystals. First, the TSEE response was measured for annealed or quenched samples. Some samples were ion-implanted by H+, He+ or Al+; then, after thermal annealing, the TSEE showed an increase relative to the non-implanted samples. This process was dependent on the element, energy and implanted dose. After a few reading cycles the TSEE of the ion-implanted samples started to decrease. However, upon re-annealing it increased once more. This showed that a fraction of the newly produced centers could be stabilized using a proper, yet still unknown, thermal treatment.