SiN x passivation films were deposited on carbon nanotube field-effect transistors (CNTFETs) by catalytic chemical vapor deposition (Cat-CVD) at low substrate temperatures. Deposition at 330°C induced many defects in the CNT channels. The measurement of electrical properties revealed that p-type CNTFETs were converted to n-type CNTFETs after deposition at 270°C. Air-stable p-type top-gated CNTFETs with SiNx passivation films deposited at 65°C were operated. Thus, Cat-CVD is highly suitable for depositing high-quality SiNx passivation films on CNTFETs and the fabrication of n- or p-type CNTFETs can be controlled by changing the deposition temperature of SiNx passivation films.

Silicon nitride (SiN x ) films on Si and poly(ethylene terephthalate) (PET) substrates were prepared at approximately 150 C by catalytic chemical vapor deposition (Cat-CVD), using a SiH 4 /NH 3 gas mixture. A water vapor transmission rate as low as 0.2 g/m 2 day and an O 2 gas transmission rate of 0.6 cm 3 /m 2 day were achieved for a stoichiometric Si 3 N 4 film of 77 nm thickness. Although these transmission rates depended on N/Si ratio, no optical absorption was observed under preferable deposition conditions.

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