A hypothesis based on the model that explains the resistance change effect of resistive random access memory by redox reaction is proposed. This hypothesis leads to the conclusion that the relationship between the polarity of the applied bias voltage and the resultant resistance change in p-type semiconductors is opposite to that for n-type semiconductors. The bias polarity dependence of the resultant resistance change in ZnO and Ga-doped ZnO (GZO), which are n-type semiconductors, and that in NiO, which is a p-type semiconductor, were investigated using conducting atomic force microscopy. Opposite bias polarity was confirmed to induce GZO and NiO into the same resistance state, which is consistent with the hypothesis.

No abstract

No abstract

A hypothesis based on the model which explains the resistance change effect of resistive random access memory (ReRAM) by redox reaction is proposed. This hypothesis leads a conclusion that the relation between the polarity of the applied bias voltage and the caused resistance change in p ‐type semiconductors is opposite to that in n ‐type. Bias polarity dependence of resultant resistance change of ZnO and Ga‐doped ZnO (GZO), which are n ‐type semiconductors, were investigated using conducting atomic force microscope (C‐AFM). It was clarified that the opposite bias polarity is required to make GZO and NiO into the same resistance state, consistent with our hypothesis. In addition, enhancement of the resistance change effect by increasing Joule heating was observed. The present work also suggested that controlling the local carrier concentration of oxide films by application of localized strong electric field is possible. This technology might enable the fabrication of not only memory devices but also new nano‐scale electronic devices (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)