No abstract

Ellipsometric measurements were applied to investigate Si homoepitaxial growth by molecular-beam epitaxy on a Si(111) substrate, and the changes in film thickness and optical parameters were monitored. The reflection high-energy electron diffraction (RHEED) intensity oscillation monitoring method was also employed for comparison. In the epitaxial growth mode, and values showed only a small spiral variation and the analyzed optical constants were nearly the same as those of single-crystal Si. The film thickness obtained by the ellipsometric method exhibited good agreement with that obtained by RHEED oscillation as well as by a quartz crystal monitor. Thus, it was shown that the film thickness monitoring by ellipsometry is useful even for the Si/Si homoepitaxial growth with a step flow mechanism, where the RHEED oscillation monitoring method is not available.