Photovoltaic (PV) devices using blend films of poly(methyl phenyl silane) (PMPS) and fullerene (C60) are fabricated, and the effects of various technical parameters during device fabrication on the PV characteristics under AM 1.5G simulated solar light illumination of 100 mW/cm2 intensity are investigated. The PV performance of the devices depends on the mixing ratio of PMPS:C60, the kind of buffer layer, the thickness of the buffer layer, and the thermal annealing temperature of the devices. The devices optimized for the mixing ratio, kind of buffer layer, and thermal annealing temperature exhibit a short-circuit current density (J SC) of 2.26 mA/cm2, an open circuit voltage (V OC) of 0.71 V, a fill factor (FF) of 0.35, and a power conversion efficiency (PCE) of 0.57%.

We report the synthesis of linear and network polysilanes containing anthryl groups and the optical properties of the thin films by heat treatments. We observe the shift to a lower energy of the absorption edge in UV–visible absorption spectra of the thin films, when the polysilane films were heated at 500 °C. This behavior is interpreted in terms of the formation of network siloxene films by the dissociation of anthryl groups from silicon structures and the accompanying incorporation of oxygen into the silicon structures. The addition of UV irradiation before heating enhances the spectral changes caused by heat treatment. It is shown that a vacuum degree during heating and backbone structures of polysilanes affect the formation of the network siloxene structures by heat treatment.

No abstract

No abstract

No abstract