Single-walled carbon nanotubes have been grown on a variety of substrates by chemical vapor deposition using low-coverage vacuum-deposited iron as a catalyst. Ordered arrays of suspended nanotubes ranging from submicron to several micron lengths have been obtained on Si, SiO 2 , Al 2 O 3 , and Si 3 N 4 substrates that were patterned on hundred nanometer length scales with a focused ion beam machine. Electric fields applied during nanotube growth allow the control of growth direction. Nanotube circuits have been constructed directly on contacting metal electrodes of Pt/Cr patterned with catalysts. Patterning with solid iron catalyst is compatible with modern semiconductor fabrication strategies and may contribute to the integration of nanotubes in complex device architectures.
We observe the capture and field ionization of individual atoms near the side wall of a single suspended nanotube. Extremely large cross sections for ionization from an atomic beam are observed at modest voltages due to the nanotube’s small radius and extended length. The effects of the field strength on both the atomic capture and the ionization process are clearly distinguished in the data, as are prompt and delayed ionizations related to the locations at which they occur. Efficient and sensitive neutral atom detectors can be based on the nanotube capture and wall ionization processes.
We describe a novel single atom detector that uses the high electric field surrounding a charged singlewalled carbon nanotube to attract and subsequently field-ionize neutral atoms. A theoretical study of the field-ionization tunneling rates for atomic trajectories in the attractive potential near a nanowire shows that a broadly applicable, high spatial resolution, low-power, neutral-atom detector with nearly 100% efficiency is realizable with present-day technology. Calculations also show that the system can provide the first opportunity to study quantized conductance phenomena when detecting cold neutral atoms with mean velocities less than 15 m=s.
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