Molybdenum disulfide (MoS2 ) transistors are emerging as an exciting material system for future electronics due to their unique electrical properties, twodimensional (2D) nature and atomically thin geometry. This ultra-thin-body (UTB) semiconductor considerably reduces current leakage and enables gate-to-channel control. The homogeneous growth of sub-10 nm dielectrics on 2D materials remains challenging. We demonstrate high-performance MoS2 FETs at low temperature (150°C) using the plasma-enhanced Atomic layer deposition (PEALD) technique. The device exhibits a high on/off current ratio of about 106 , the field-effect mobility of 9.5 cm2 /Vs, and a subthreshold swing (SS) of 171 mV/dec, which is comparable to the similar structure of the top gate device. In addition, we have demonstrated contact resistance on back-gate MoS2 FETs with and without dielectric capping

Nanoelectronics holds significant promise for two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) applications. On a polycrystalline WS2 monolayer created by metal-organic chemical vapor deposition (MOCVD) at 950 °C, we studied the nucleation, growth, and development of Al2O3 atomic layer deposition (ALD) on a SiO2/Si substrate. In this investigation, we used various complementary characterization methods, such as Raman spectroscopy, elastic recoil detection, atomic force microscopy, and time-of-flight secondary ion mass spectrometry, to understand thoroughly the intrinsic reactivity of WS2. Strong peak intensity changes at the interfaces in the Raman line scans of the SiO2/Si patterns suggest extremely crystalline WS2. After multiple ALD cycles, triangular WS2 crystals were decorated to provide a two-dimensional growth mode with a great selectivity for grain boundaries and step edges. The results of this work can be used for further exploration of the TMD monolayer structure and properties, which is essential for tailoring 2D materials for a specific application in devices.