No abstract

Ambipolar field-effect transistors (FETs) were fabricated with a heterostructure of pentacene/C60 in which the C60 layer functioned as an n-type channel while the pentacene layer functioned as both a p-type channel and a sealing capsule for the unstable C60 layer. The ambipolar FET, operating in an ambient atmosphere, exhibited a hole mobility of 0.2 cm2/V s with a threshold voltage of −2.3 V and an electron mobility of 0.04 cm2/V s with a threshold voltage of 66 V with moderately good air stability. However, the threshold voltage and gate voltage for the n-channel operation must be improved for practical applications.

p s s applications and materials science a status solidi www.pss-a.com physica High-dielectric-constant hafnium silicate insulator for low-voltage pentacene field-effect transistors