This paper explores the flexible ITO/nano-Ag/ITO multilayer electrodes grown on polyethylene terephthalate (PET) substrates and processed by a continuous roll-to-roll (R2R) sputtering system at room temperature used for flexible electrochromic device (ECD) applications. The effect of the nano-Ag interlayer thickness on the electrical and optical properties of the flexible ITO/nano-Ag/ITO multilayer was thoroughly investigated. By using R2R-sputtered at an Ag DC power of 0.2 kW, we were able to achieve optimal ITO/nano-Ag/ITO multilayer that exhibits a high optical transmittance of 87.19% and the best figure of merit value (30.93 × 10−3 Ω−1). The EC performance and stability of the flexible devices were tested by a cathodic WO3 coloration. Coloring and bleaching tests show that ITO/nano-Ag/ITO multilayers are highly effective conductors, indicating that the R2R sputtering technique is a promising continuous sputtering process in preparing for the fabrication of optical devices and flexible electronics industries.

This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 °C for 30 min annealing in the hydrogen atmosphere. Under a 3-μW/cm2 incident light (with a wavelength of 550 nm) and up to 27-V biased voltage, the APS with a n+-n-p-p+ alloy/SiO2/Si-substrate structure using the better annealed poly-SiGe film process showed improved performance by nearly 70%, 96% in responsivity, and 85% in quantum efficiency, when compared to the non-annealed APS. The optimal avalanche multiplication factor curve of the APS developed under the exponent of n = 3 condition can be improved with an increase in uniformity corresponding to the APS-junction voltage. This finding is promising and can be adopted in future photo-sensing and optical communication applications.

No abstract

In this paper, the performance of Cu-(In,Ga)-S2 (CIGS2) solar cells with adjusting composite CGI-ratio absorber is explored and compared through an improved three-stage co-evaporation technique. For co-evaporating CIGS2 absorber as a less toxic alternative to Cd-containing film, we analyse the effect of the CGI-ratio stoichiometry and crystallinity, and explore its opto-electric sensing characteristic of individual solar cell. The results of this research signify the potential of high-performance CIGS2-absorption solar cells for photovoltaic (PV)-module industrial applications. For the optimal CIGS2-absorption film (CGI=0.95), the Raman main-phase signal (A1) falls at 291 cm-1, which is excited by the 532-nm line of Ar+-laser. Using photo-luminescence (PL) spectroscopy, the corresponding main-peak bandgaps measured is 1.59 eV at the same CGI-ratio film. Meanwhile, the best conversion efficiency (=3.212%) and the average external quantum efficiency (EQE=51.1% in the visible-wavelength region) of photo-electric properties were achieved for the developed CIGS2-solar cells (CGI=0.95). The discoveries of this CIGS2-absorption PV research provide a new scientific understanding of solar cells. Moreover, this research undeniably contributes to a major advancement towards practical PV-module applications and can help more to build an eco-friendly community.