In this study, a 60-nm enhancement-mode (E-mode) In0.65Ga0.35As/InAs/In0.65Ga0.35As high electron mobility transistor (HEMT) was developed, and its potential for use inhigh-speed and low-power logic applications was investigated. When the E-mode device was biased at a drain-source voltage of 0.5 V, it demonstrated a cutoff frequency of 169 GHz, drain-induced barrier lowering of 70 mV/V, minimum subthreshold swing of 67 mV/decade, and ION/IOFF ratio greater than 1.6 × 104. The high performance of the E-mode device is attributed to the use of a thin barrier layer along with Pt gate sinking technology. These results confirm that E-mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs have great potential for use inhigh-speed and low-power logic applications.