Ti silicide technology using an Al/Ti bilayer is investigated to reduce TiSi2 sheet resistance on the arsenic (As)-implanted Si surface. A 38% reduction resulting in the sheet resistance value of 1.62 Ω/sq was obtained using the bilayer of 5 nm Al/55 nm Ti. The resistivity of the film is 14.3 µΩ·cm. These films showed a very smooth silicide/Si interface. X-ray diffraction observation shows a C54 phase with high (010) orientation. Void formation was not detected by transmission electron microscope (TEM) and scanning electron microscope (SEM) observations.