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A highly reliable small‐signal parameter extraction method for parasitic elements of the 0.1‐µm GaAs metamorphic high electron mobility transistors is presented. De‐embedding scheme for the coplanar waveguide (CPW) feeding structure is utilised in this method in a frequency range of 0.5–110 GHz with an enhancement approach to the correction of source inductance parameter sensitivity derived from oscillating measurements. The parasitic extrinsic capacitances are determined by modelling an ∏ equivalent circuit including the interaction between the sub‐model and the CPW feedings. From this method, the authors achieved the most accurate parameter prediction with an effective fitting error of 10.83% among the small‐signal models reported to date.

In this paper calculation of new optical switch parameters that allows us to create next generation all-optical non-blocking switching system without external control devices is carried out for the first time. In particular, switching cell control device is studied in detail. The presented one includes Bragg filter, frequency detector, optical isolator, and former of a control signal. Here we also present the detail description and the numerical calculations of these devices for third transparent window (1550nm). The reflection and transmission coefficients are obtained, the passbands of the Bragg filter are presented, and the amplitude characteristic of the frequency detector is calculated.