Bismuth vanadate with reduced graphene oxide (BiVO4/RGO) is prepared via ultrafast, energy‐efficient microwave‐assisted hydrothermal technique. Subsequently, Ag3PO4 nanoparticles are decorated on BiVO4/RGO by impregnated solution process. Photoelectrochemical (PEC) performance is carried out using as‐synthesized ternary heterostructure ms‐BiVO4/RGO/Ag3PO4 nanohybrid photoanode film and Pt‐wire as cathode in 0.5 m Na2SO4 electrolyte solution under AM 1.5 G (100 mW cm−2) irradiation. An enhanced photocurrent density of ≈3.6 mA cm−2 at +1.23 VRHE is observed for water oxidation, which is ≈2.3 times higher than pristine ms‐BiVO4 (1.58 mA cm−2). Furthermore, 10.1% of incident light‐to‐photocurrent conversion at λ = 450 nm and improved solar‐to‐hydrogen conversion efficiency of 4.5% with consistent photostability up‐to 24 h is achieved. While Rhodamine‐B dye degradation is investigated using BiVO4/RGO/Ag3PO4 photocatalyst, offers highest visible‐light‐driven photocatalytic (PC) degradation with average rate constant of kavg = 1.70 × 10−1 min−1 in 20 min, ≈4.3 times higher than pristine ms‐BiVO4. Such enhancement in PEC and PC performances is due to improved light absorbance coefficient with extended hole diffusion length (LPEC/PC  = 209/147 nm) that enables efficient interfacial charge separation, transportation, and reduced photoinduced recombination. Herein, a strategy of designing an efficient nanohybrid photo(electro)catalyst to generate H2 fuel from water oxidation process and for environmental remediation is developed.

Herein, we report intriguing observations of an extremely stable nonvolatile bipolar resistive switching (NVBRS) memory device fabricated using HfO 2 −TiO 2 topologically protected by Al 2 O 3 as a stacked base layer for a CH 3 NH 3 PbI 3 (MAPI) electrolyte layer sandwiched between Ag and fluorine-doped tin oxide (FTO) electrodes. MAPI has been successfully synthesized by a rapid microwave−solvothermal (MW-ST) method within 10 min at 120 °C without requiring any inert gas atmosphere using lowcost precursors and solvents. Subsequently, MAPI powders are dissolved in aprotic solvents (DMF/DMSO = 8:2), and a spin-coated thin film is allowed to recrystallize upon annealing at 120 °C via a solution-based nanoscale self-assembly process. The fabricated memory device with the Ag/MAPI/Al 2 O 3 /TiO 2 -HfO 2 /FTO configuration shows an enhanced resistance ratio of 10 5 for >10 4 s at an extremely lower operating voltage (SET +0.2 V, RESET −0.2 V) when compared to that of the pristine MAPI device (±1 V, 10 2 , 10 4 s). We show that the memory device also exhibits a remarkable endurance of ≥3500 cycles due to the Al 2 O 3 robust coating on the HfO 2 −TiO 2 layer, facilitating prompt heterojunction formation. Thus, the adopted innovative strategies to prepare structurally and optically stable (∼1.5 years) MAPI under high-humid conditions could offer enhanced performance of NVBRS memory devices for medical, security, internet of things (IoT), and artificial intelligence (AI) applications.

The effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layer has been systematically investigated to achieve improvement in charge-carrier dynamics and endurance of non-volatile bipolar (NVB)...

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