Modern healthcare is transforming from hospital-centric to individual-centric systems. Emerging implantable and wearable medical (IWM) devices are integral parts of enabling affordable and accessible healthcare. Early disease diagnosis and preventive measures are possible by continuously monitoring clinically significant physiological parameters. However, most IWM devices are battery-operated, requiring replacement, which interrupts the proper functioning of these devices. For the continuous operation of medical devices for an extended period of time, supplying uninterrupted energy is crucial. A sustainable and health-compatible energy supply will ensure the high-performance real-time functioning of IWM devices and prolong their lifetime. Therefore, harvesting energy from the human body and ambient environment is necessary for enduring precision healthcare and maximizing user comfort. Energy harvesters convert energy from various sources into an equivalent electrical form. This paper presents a state-of-the-art comprehensive review of energy harvesting techniques focusing on medical applications. Various energy harvesting approaches, working principles, and the current state are discussed. In addition, the advantages and limitations of different methods are analyzed and existing challenges and prospects for improvement are outlined. This paper will help with understanding the energy harvesting technologies for the development of high-efficiency, reliable, robust, and battery-free portable medical devices.

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This paper presents technology computer-aided design (TCAD) modeling of an enhancement-mode aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistor (HEMT) with extensive π-gate optimization for high-power and radio frequency (RF) applications. Effects of the gate voltages on threshold (Vth), transconductance (gm), breakdown voltage (VBR), cutoff frequency (fT), maximum frequency of oscillation (fmax) and minimum noise figure (NFmin) are systematically investigated with different gate structures (π–Shaped p-GaN MISHEMT, π–Shaped p-GaN HEMT, π–Gate HEMT). A comparative study demonstrates that π–Gate with additional p-GaN and insulating layer makes the device effectively operate in the enhancement mode having a threshold voltage (Vth) = 1.72 V with a breakdown voltage (VBR) = 341 V, exhibiting better gate control with maximum transconductance (gm,max) of 0.321 S/mm. In addition, the proposed device architecture with an optimized gate structure maintains a balance between a positive device threshold and a high breakdown voltage and achieves a better noise immunity with the minimum noise figure of 0.64 dB while operating at 10 GHz with a cutoff frequency (fT) of 33.4 GHz, and a maximum stable operating frequency (fmax) of 82.3 GHz. Moreover, the device achieved an outstanding Vth, gm,max, VBR, fT, fmax and NFmin making it suitable for high-power, high-speed electronics, and low-noise amplifiers.