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Al 0.32 Ga 0.68 N/GaN heterostructure field-effect transistors ͑HFETs͒ grown by low-pressure metallorganic chemical vapor deposition are successfully fabricated. A Mg-doped insulating GaN layer is inserted to suppress the leakage current, improve the breakdown voltages, and yield excellent pinch-off characteristics. Moreover, HFETs with different channel thicknesses of 1200, 1500, and 1800 Å are investigated. Experimental results show that an HFET with a 1800 Å thick channel layer has the highest electron mobility, electron concentration, drain current, and extrinsic transconductance.

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