The effect of fluorine incorporation on PtSi/Si structure is studied systematically. It is observed that the fluorine incorporation from ion implantation improves the hightemperature stability of the PtSi/Si structure. The optimum implantation energy is determined to be the energy at which the maximum percentage of the as-implanted fluorine ion locates at the PtSi/Si interface region. The SIMS analysis shows that the fluorine atom piles up at the PtSi/Si interface. The XPS analysis indicates that the fluorine atoms at the PtSi/Siinterface are bonded to the silicon atoms in a form of SiF2 or SiF3. A fluorine-buffer (FB) model is proposed to explain the effect of fluorine incorporation. It is postulated that the Si-F layer acts as a buffer layer to change the PtSi/Si interface energy and preserve the integrity of the silicide layer at high temperature. Fluorinated Schottky junctions are fabricated and the electrical characteristics show that the sustainable process temperature can be improved from 650°C for the unfluorinated Schottky junctions to higher than 800°C for the fluorinated Schottky junctions. Recently, the effect of fluorine incorporation on the MOS device has become an attractive research field. Sequential experiments on the dielectric properties, the radiation hardness, and the hot-carrier immunity of the fluorinated MOS device has been pursued by Yale, Stanford, and Hitachi groups [9]-[ 161. With fluorine incorporation at appropriate conditions, the interface state density and the interface radiation hardness of the Si02/Si interface and the hot-carrier resistance of the MOSFET