CrWN coatings were fabricated through a hybrid high-power impulse magnetron sputtering/radio-frequency magnetron sputtering technique. The phase structures, mechanical properties, and tribological characteristics of CrWN coatings prepared with various nitrogen flow ratios (fN2s) were investigated. The results indicated that the CrWN coatings prepared at fN2 levels of 0.1 and 0.2 exhibited a Cr2N phase, whereas the coatings prepared at fN2 levels of 0.3 and 0.4 exhibited a CrN phase. These CrWN coatings exhibited hardness values of 16.7–20.2 GPa and Young’s modulus levels of 268–296 GPa, which indicated higher mechanical properties than those of coatings with similar residual stresses prepared through conventional direct current magnetron sputtering. Face-centered cubic (fcc) Cr51W2N47 coatings with a residual stress of −0.53 GPa exhibited the highest wear and scratch resistance. Furthermore, the diffusion barrier performance of fcc CrWN films on Cu metallization was explored, and they exhibited excellent barrier characteristics up to 650 °C.

WSiN films were produced through hybrid pulse direct current/radio frequency magnetron co-sputtering and evaluated as diffusion barriers for Cu metallization. The Cu/WSiN/Si assemblies were annealed for 1 h in a vacuum at 500–900 °C. The structural stability and diffusion barrier performance of the WSiN films were explored through X-ray diffraction, Auger electron spectroscopy, and sheet resistance measurement. The results indicated that the Si content of WSiN films increased from 0 to 9 at.% as the power applied to the Si target was increased from 0 to 150 W. The as-deposited W76N24, W68Si0N32, and W63Si4N33 films formed a face-centered cubic W2N phase, whereas the as-deposited W59Si9N32 film was near-amorphous. The lattice constants of crystalline WSiN films decreased after annealing. The sheet resistance of crystalline WSiN films exhibited a sharp increase as they were annealed at 800 °C, accompanied by the formation of a Cu3Si compound. The failure of the near-amorphous W59Si9N32 barrier against Cu diffusion was observed when annealed at 900 °C.