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On indium doped silicon monolithic integrated focal plane arrays with 64 x 64 picture elements were developed. The chip size is 56 mm2, the pixel size 55/um x 65 /um, the pitch 85 //um, and the fill factor 50 %. The black body (500K) detectivity of the ifnage sensor is 2 k 1011 cm W-1 sec -1/2 and the inhomogenity of the responsivity less than 5 %.The significant features of the array are picture elements operating with punch through technique (inherent antiblooming) resistive gate structure for the read -out in the vertical direction -4 phase CCD for serial read -out in the horizontal direction Using this device a camera system has been built to demonstrate the possibilities for thermal imaging with extrinsic silicon. The output signals are processed with the double correlated sampling method. To fully utilize the performance capability of the device it is necessary to compensate offset and gain nonuniformities. The demonstration system is built up with a pixel -by -pixel offset compensation with 10 bit correction factors.

On indium doped silicon monolith integrated focal plane arrays with 300 x 200 picture elements were developed. The chip size is 100 mm2, the pixel size 10 um x 10 um and the pitch 20 um in both directions. The picture elements operate with punch through technique (inherent antiblooming) and the read -out structure is a frame transfer design.PtSi Schottky barrier focal plane arrays with 128 x 64 picture elements were developed. To achieve high photoresponse the SBDs are constructed with a thin layer of PtSi separated from an aluminum mirror by a layer of Si3N4. The focal plane arrays show an excellent homogeneity of the responsivity. Quantum efficiencies of several percent are achivied.Test camera systems have been built with PtSi devices and with focal plane array on In doped Si to demonstrate the possibilities of infrared sensors using silicon as the basic material.1.