Longitudinal and Hall resistivities, scaling behavior, and magnetizations are examined to study the effect of flux pinning in Ba(Fe 1−x Co x ) 2 As 2 (BFCA) single crystals with x = 0.08 and 0.01. Larger values of activation energy, critical current density, and pinning force are obtained in BFCA with x = 0.10, indicating relatively strong pinning. The sign reversal of Hall resistivities is clearly observed in BFCA with x = 0.10. The correlation between longitudinal and Hall resistivities shows the scaling behavior of ρ xy ∝ (ρ xx ) β with exponents β = 3.0-3.4 and 2.0 ± 0.2 for BFCA crystals with x = 0.08 and 0.10, respectively. Furthermore, the normal-state Hall angle is also observed to follow cot θ H = T 2 + C in BFCA crystals, and is explained by the Anderson theory. The relatively large C/ value for BFCA with x = 0.10 also implies a larger contribution of impurity scattering due to more Co atoms, which may cause stronger pinning of flux lines. The results are analyzed and coincide with theory, including the pinning-induced backflow effect and plastic flow mechanism in vortex dynamics.
Using atomic force microscopy and scanning electron microscopy (SEM), we investigate the correlations between the microstructural defects and the electrical characteristics of the bicrystal grain-boundary Josephson junctions and dc superconducting quantum inference devices (SQUIDs). The structural defects are shown to correlate qualitatively with the characteristics of grain-boundary Josephson junctions patterned on the YBa2Cu3O7−x film. SEM images show that these defects grown on the grain boundary were a few submicron depth of the groove. The low flux noise characteristics were observed when the groove depth was smaller than 18nm in the junctions of the SQUID. The existence of these defects is expected to affect the supercurrent and the motion of the magnetic flux in the films, which dominate the excess noise in the SQUID with bicrystal junctions.
The in-plane longitudinal and Hall resistivities, ρxx and ρxy, of superconducting NaFe1-xCoxAs (NFCA) single crystals with x = 0.022 and 0.0205 in the mixed state and the normal state were measured to study the electrical transport properties in nearly optimum-doping iron-based superconductors. The resistivities under magnetic fields show thermally activated behavior and a power law magnetic field dependence of activation energy has been obtained. Due to the weak flux pinning, there is no sign reversal of Hall resistivities observed for NFCA with either x = 0.022 or 0.0205. The correlation between longitudinal and Hall resistivities shows that the scaling behavior of |ρxy| ∝ (ρxx)(β) with the exponent β ≈ 2.0 is in agreement with theoretical predictions for weak-pinning superconductors. Anisotropic upper critical fields and coherence lengths with an anisotropy ratio of γ ≈ 1.63 have been deduced. Furthermore, the normal-state transport properties show that the anomalies of the linear-T resistivity, the T(2)-dependent cotangent of the Hall angle, the linear-T-like Hall number, and the magnetoresistance, which can be scaled by the modified Kohler rule, are analogous to those observed on optimally doped high-Tc superconducting cuprates and other pnictides. The longitudinal resistivity can be understood within a widely accepted scenario of the spin density-wave quantum critical point, while the transverse resistivity requires some further explanation. It is suggested that all the transport anomalies should be simultaneously taken into account when developing theory.
A gate-voltage-controlled high transition temperature direct current superconducting quantum interference device (high-T(c) dc SQUID) magnetometer was fabricated to study how the electric field effect affects the device's voltage-flux and voltage-current characteristics. The magnetometer consists of a monolithic YBa(2)Cu(3)O(7-delta) superconducting film and bicrystal junctions covered by a polymethylmethacrylate film as the gate insulator. It was found that the magnetic flux modulated voltage swing of the SQUID magnetometer varies by 48% when the gate voltage is changed from -1.9 to 9.5 V. The variation in voltage swing is attributed to the change of effective capacitance in grain-boundary junctions
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