Top-down fabrication of nanostructures with high throughput is still a challenge. We demonstrate the fast (>10 m/min) and continuous fabrication of multilength scale structures by roll-to-roll UV-nanoimprint lithography on a 250 mm wide web. The large-area nanopatterning is enabled by a multicomponent UV-curable resist system (JRcure) with viscous, mechanical, and surface properties that are tunable over a wide range to either allow for usage as polymer stamp material or as imprint resist. The adjustable elasticity and surface chemistry of the resist system enable multistep self-replication of structured resist layers. Decisive for defect-free UV-nanoimprinting in roll-to-roll is the minimization of the surface energies of stamp and resist, and the stepwise reduction of the stiffness from one layer to the next is essential for optimizing the reproduction fidelity especially for nanoscale features. Accordingly, we demonstrate the continuous replication of 3D nanostructures and the high-throughput fabrication of multilength scale resist structures resulting in flexible polyethylenetherephtalate film rolls with superhydrophobic properties. Moreover, a water-soluble UV-imprint resist (JRlift) is introduced that enables residue-free nanoimprinting in roll-to-roll. Thereby we could demonstrate high-throughput fabrication of metallic patterns with only 200 nm line width.

A nanoimprinting process that enables fabrication of self‐aligned p‐ and n‐type organic thin film transistors with small channel lengths is presented. Nanoimprint lithography with back‐side exposure permit precise definition of the channel length down to the submicrometer regime and a diminutive gate to source/drain overlap. The self‐aligned manufacturing process enables transistor setups with minimized electrode overlaps resulting in distinct decrease of parasitic capacitances and considerable increase in transition frequency. Fully functional small channel OTFTs with p‐ and n‐type semiconductors are fabricated on glass as well as on flexible substrates with transition frequencies up to 400 kHz.

No abstract

No abstract