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Zinc oxide (ZnO) nanostructures have received broad attention due to its wide applications especially for thin‐film solar cells and transistors. In this paper, we report the effects of heat treatment on the structural and optical properties of ZnO nanostructures. Zinc oxide nanostructures were synthesized using thermal chemical vapour deposition (CVD) method on glass substrate. The surface morphologies which were observed by scanning electron microscope (SEM) show that ZnO nanostructures change its shape and size when the annealing temperature increases from 400 °C to 600 °C. Structural measurement using X‐ray diffraction (XRD) has shown that ZnO nanostructures have the highest crystallinity and smallest crystallite size (20 nm) when annealed at 550 °C. Furthermore, the samples were optically characterized using Photoluminescence (PL) spectrometer. The PL spectra indicate that ZnO nanostructures have the highest peak at UV wavelength when annealed at 550 °C. The mechanism of the PL properties of ZnO nanostructures is also discussed. We conclude that ZnO nanostructures deposited using thermal CVD have the optimum structural and PL properties when annealed at 550 °C. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

In this study, a novel approach of using two different methods was investigated to prepare the CuI thin films. The CuI thin films in this research were prepared by spin coating method and by mister atomizer. Both methods used CuI powder as a precursor and acetonitrile as a solvent. The thickness of CuI films in this research range from nm – um thickness depending on the deposition technique. The 2 point probe I-V measurement was used to measure the electrical properties. The resistivity of about 106 Ω cm-101 Ω cm was observed with CuI thin films using spin coating technique. Then, the surface morphology shows all the films exhibit a microsturucture CuI particles in a case of mister atomizer method. For optical measurement, the ultraviolet-visible- near infrared (UV-VIS-NIR) measurement (Perkin Elmer Lambda 750) was used. The optical band gap of about ±3.1 eV and ±2.9 eV were observed in those CuI films. These properties of different technique are applicable for application in electronic devices such as in solar cells.