A physical model for explanation of experimentally observed effect of avalanche noise-factor F decrease in MIS-type heterostructures upon a multiplication factor increase is offered. The model is based on the assumption that carriers are retarded near heteroboundary due to trapping by a potential well (for a example in Si02/Si and Ti02/Si) or by surface levels. The calculation results correlate numerically with the experimental data.

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A concept of profile photoelectronics is introduced. A photoresistor is used as an example to present the basic principles of this new promising branch of photoelectronics. It is based on specific profiling of the shape of the incident radiation flux relative to the direction of the electric field. The possibility of new anomalous photoelectric effects in semiconductors is theoretically shown. They are called self-amplification of incident radiation, self-quenching, and self-inversion of the sign of the photogeneration rate (generation of negative photoconductivity). Specific examples are provided for all three types of profiles. The results of the analysis fundamentally change the existing concepts of possible photoelectric effects in semiconductors. Such results open up prospects for development of a new generation of photodetectors for weak optical and short-wavelength radiation.

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