The effect to various factors such as temperature, concentration of components in the electrolyte, current density on the composition of thin electrodeposited semiconductive Sb-Se films were viewed in the work. Results obtained indicate that the stibium content in the deposited compounds increases as temperature and concentration of SbOCl rise. As the current density, H2SeO3 and C4H6O6 concentration rises, the stibium content in the films obtained goes dpwn respectively. It revealed that black, uniform, crystalline and lustrous coatings of Sb2Se3 compound are generated in temperature interval 298-318К, current density 20-60 мА/cm 2 out of electrolyte 0,01-0,09 М SbOCl,0,01-0,09 МH2SeO3, and compounds of 0.001-0.007 М tartaric acid.
<p class="PaperAbstract">The present contribution is devoted to the electrochemical deposition of Sb<sub>2</sub>Se<sub>3</sub> thin films from tartrate electrolyte. The study was conducted by potentiodynamic, potentiostatic and galvanostatic methods carried out under different conditions at Pt, Cu and Ni electrodes. The kinetics and mechanism of the electroreduction of antimony and selenite ions in the tartaric acid were studied separately for the electrochemical deposition. Comparison of the obtained polarization curves showed that co-deposition occurs between electroreduction potentials of antimony and selenium, indicating depolarization electrode effect for antimony ions. The influence of electrolyte composition, pH, current density, temperature, etc. has been studied. On the basis of cyclic polarization, X-ray phase and SEM-EDX analyses, it is found that Sb-Se thin films are deposited on Pt and Ni electrodes, but not on Cu electrode. Black, uniform, crystalline and shiny films of the stoichiometric composition of Sb<sub>2</sub>Se<sub>3</sub> compound are deposited on Pt and Ni electrodes within the 338-348 K temperature interval, pH 1.85, current density of 2.5-3.0 A/dm<sup>2</sup>, and annealing temperature of 703 K. Experiments were carried out using the optimal electrolyte composition containing 0.05 M SbOCl + 0.05 M H<sub>2</sub>SeO<sub>3</sub> + 0.007 M C<sub>4</sub>H<sub>6</sub>O<sub>6</sub>.</p>
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